This is the first definitive book on rapid thermal processing (RTP), an essential namufacturing technology for single-wafer processing in highly controlled environments. Written and edited by nine experts in the field, this book covers a range of topics for academics and engineers alike, moving from basic theory to advanced technology for wafer manufacturing. The book also provides new information on the suitability or RTP for thin film deposition, junction formation, silicides, epitaxy, and in situ processing. Complete discussions on equipment designs and comparisons between RTP and other processing approaches also make this book useful for supplemental information on silicon processing, VLSI processing, and integrated circuit engineering.
Contributors
Chapter 1: Rapid Thermal Processing-A Justification
Richard B. Fair
I. Manufacturing Issues in the Gigachip Age
II. The Parameter Budget Crisis
III. Conclusions
References
Chapter 2: Rapid Thermal Processing-Based Epitaxy
J.L. Hoyt
I. Introduction to Silicon Epitaxy
II. Characteristics of Rapid Thermal Processing-Based Silicon Epitaxy
III.Growth of Strained Silicon-Germanium Alloys
IV. Summary
References
Chapter 3: Rapid Thermal Growth and Processing of Dielectrics
Hisham Z. Massoud
I. Equipment Issues in Rapid Thermal Oxidation
II. Rapid Thermal Oxidation Growth Kinetics
III.Rapid Thermal Processing of Oxides
IV.Electrical Properties of Rapid Thermal Oxidation/Rapid Thermal Processing Oxides
V. Conclusions
Acknowledgements
References
Chapter 4: Thin-Film Deposition
Mehmet C. Ozturk
I. Equipment
II. Thin-Film Deposition Processes
III. In Situ Processing-Applications
IV Equipment Issues
V. Summary
References
Chapter 5: Extended Defects from Ion Implantation and Annealing
Kevin S. Jones and George A. Rozgonyi
I. Introduction
II. Defect Formation Kinetics
III. Defect Annealing Kinetics
Summary
References
Chapter 6: Junction Formation in Silicon by Rapid Thermal Annealing
Richard B. Fair
I. Rapid Thermal Annealing of Ion-Implanted Junctions
II. Dopant Activation
III. Summary and Conclusions
References
Chapter 7: Silicides
C.M. Osburn
I. Introduction
II. Formation of Silicides
III. Properties of Silicides and Silicided Junctions
IV. Properties of Silicides and Process/Device Considerations
Summary
References
Chapter 8: Issues in Manufacturing Unique Silicon Devices Rapid Thermal Annealing
B. Lojek
I. Impact of Patterned Layers on Temperature Nonuniformity Rapid Thermal Annealing
II. Bipolar Transistor Processing
III. MOS Transistor Processing
IV. Conclusion
References
Chapter 9: Manufacturing Equipment Issues in Rapid Thermal Processing
Fred Roozeboom
I. Historical Survey of Rapid Thermal Processing
II. Fundamental Thermophysics in Rapid Thermal Processing
III. General Rapid Thermal Processing System Components
IV. Survey of Commercial Rapid Thermal Processing Equipment
V. Temperature Nonuniformity, System Modeling, and Effective Emissivity
VI. Noncontact In Situ Real-Time Process Control Options
VII. Recent Developments and Future Trends in Rapid Thermal Processing
VIII. Technology Roadmap and Concluding Remarks
References
Index
