Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also:
Describes spintronic applications in current and future magnetic recording devices
Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis
Investigates spintronic device write and read optimization in light of spintronic memristive effects
Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects
Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic
Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.
Preface
About the Editor
Contributors
Chapter 1 : Perpendicular Spin Torque Oscillator and Microwave-Assisted Magnetic Recording Chapter 2 : Spin-Transfer-Torque MRAM: Device Architecture and Modeling Chapter 3 : The Prospect of STT-RAM Scaling Chapter 4 : Spintronic Device Memristive Effects and Magnetization Switching Optimizing Chapter 5 : Magnetic Insulator-Based Spintronics: Spin Pumping, Magnetic Proximity, Spin Hall, and Spin Seebeck Effects on Yttrium Iron Garnet Thin Films Chapter 6 : Electric Field-Induced Switching for Magnetic Memory Devices
