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Integrated Power Devices and TCAD Simulation

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Title: Integrated Power Devices and TCAD Simulation
Author: Johnny K.O. Sin, Wai Tung Ng, Yue Fu, Zhanming Li
ISBN: 1138071854 / 9781138071858
Format: Soft Cover
Pages: 368
Publisher: CRC Press
Year: 2014
Availability: 2 to 3 weeks
     
 
  • Description
  • Contents

This book is about the introduction of power IC, the BCD technology with a focus on TCAD simulation applications. Readers will be able to get a complete picture of what is power IC technology, how to realize the integration, how to design the individual power devices using TCAD, as well as a deep understanding of TCAD simulation methods. The book introduces GaN HEMT, which is considered as a shining star for tomorrow's high voltage technology.

Preface

Part I : Introduction
Chapter 1 :
From Power Electronics to Power Semiconductor Devices
Chapter 2 : The Semiconductor Industry and More Than Moore
Chapter 3 : What You Can Get from This Book and The Chapter Arrangement

Part II : Smart Power ICS and Their Applications
Chapter 4 :
Introduction to Power IC and Power SOC
Chapter 5 : Integrated Power Electronics, Power Conversion, and Power Management
Chapter 6 : Discrete and Integrated Power Semiconductor Devices
Chapter 7 : Smart Power IC Fabrication Technologies

Part III : Evolution of Power Devices and Power ICS
Chapter 8 :
Power Devices, A Historical Perspective
Chapter 9 : Power IC Technology Evolution
Chapter 10 : Power IC, A Survey of Different Technologies

Part IV : Power ICS Process Flow and Process Integration
Chapter 11 :
Dedicated and CMOS Compatible Smart Power IC Fabrication Technologies
Chapter 12 : A CMOS Compatible Process Flow for Smart Power IC
Chapter 13 : Lateral Power Device Characteristics, On-Resistance, Breakdown Voltage and Ruggedness
Chapter 14 : Heat Flow and Thermal Conductivity
Chapter 15 : Isolation, Minority Carrier Injection, Substrate Leakage and Prevention
Chapter 16 : Reliability Consideration and Packaging

Part V : Introduction to Technology Computer Aided Design (TCAD)
Chapter 17 :
What is TCAD, Why Do We Need TCAD
Chapter 18 : How TCAD is Used in Various Stages of Technology Development
Chapter 19 : TCAD Models and Methods for Process Simulation
Chapter 20 : TCAD Models and Methods for Device Simulation
Chapter 21 : About 3D TCAD Simulation

Part VI : TCAD Simulation of Integrated Power Semiconductor Devices
Chapter 22 :
Integrated Diodes and Zener Diodes
Chapter 23 : Integrated LDMOS, UMOS and Superjunction LDMOS
Chapter 24 : Integrated BJT Devices
Chapter 25 : Integrated Capacitors and Resistors
Chapter 26 : Integrated Inductors and Transformers
Chapter 27 : Other Components, Digital MOSFET, Analog MOSFET, Anti-Fuse
Chapter 28 : Thermal Simulation and Self Heating
Chapter 29 : Hybrid, Mixed-Signal Simulation

Part VII : Introduction to Gan HEMT and The Possibility of Silicon Integration
Chapter 30 :
Gan Advantages
Chapter 31 : Enhancement Mode and Depletion Mode HEMT Power Devices
Chapter 32 : Substrate of Choice and Possible Integration With Silicon

Summary and Conclusion
Bibliography
Index

 
 
 
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